JPH0222547B2 - - Google Patents

Info

Publication number
JPH0222547B2
JPH0222547B2 JP56076806A JP7680681A JPH0222547B2 JP H0222547 B2 JPH0222547 B2 JP H0222547B2 JP 56076806 A JP56076806 A JP 56076806A JP 7680681 A JP7680681 A JP 7680681A JP H0222547 B2 JPH0222547 B2 JP H0222547B2
Authority
JP
Japan
Prior art keywords
cathode
gate
gate region
region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56076806A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5718361A (en
Inventor
Arubaato Keisu Tenpuru Bikutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5718361A publication Critical patent/JPS5718361A/ja
Publication of JPH0222547B2 publication Critical patent/JPH0222547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP7680681A 1980-05-23 1981-05-22 High voltage semiconductor device Granted JPS5718361A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/152,770 US4261000A (en) 1980-05-23 1980-05-23 High voltage semiconductor device having an improved dv/dt capability

Publications (2)

Publication Number Publication Date
JPS5718361A JPS5718361A (en) 1982-01-30
JPH0222547B2 true JPH0222547B2 (en]) 1990-05-18

Family

ID=22544363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7680681A Granted JPS5718361A (en) 1980-05-23 1981-05-22 High voltage semiconductor device

Country Status (6)

Country Link
US (1) US4261000A (en])
JP (1) JPS5718361A (en])
CA (1) CA1160358A (en])
CH (1) CH655204A5 (en])
DE (1) DE3120124A1 (en])
SE (1) SE451918B (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
JPS61113279A (ja) * 1984-11-08 1986-05-31 Fuji Electric Co Ltd 光サイリスタ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4312107Y1 (en]) * 1966-03-29 1968-05-24
DE2146178C3 (de) * 1971-09-15 1979-09-27 Brown, Boveri & Cie Ag, 6800 Mannheim Thyristor mit Steuerstromverstärkung
DE2238486A1 (de) * 1972-08-04 1974-02-14 Siemens Ag Thyristor
DE2300754A1 (de) * 1973-01-08 1974-07-11 Siemens Ag Thyristor
JPS502482A (en]) * 1973-05-08 1975-01-11
JPS5718347B2 (en]) * 1974-01-07 1982-04-16
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
DE2607678A1 (de) * 1976-02-25 1977-09-01 Siemens Ag Anordnung zum herabsetzen der freiwerdezeit eines thyristors
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
DE2739187C2 (de) * 1977-08-31 1981-10-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor

Also Published As

Publication number Publication date
DE3120124A1 (de) 1982-03-04
DE3120124C2 (en]) 1993-09-16
SE8103223L (sv) 1981-11-24
JPS5718361A (en) 1982-01-30
SE451918B (sv) 1987-11-02
US4261000A (en) 1981-04-07
CA1160358A (en) 1984-01-10
CH655204A5 (de) 1986-03-27

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